Part Number | MUR20040CT |
Manufacturer | Naina Semiconductor |
Title | Super Fast Recovery Diode |
Description | Naina Semiconductor Ltd. MUR20040CT thru MUR20060CTR Features Super Fast Recovery Diode, 200A • Dual Diode Construction • Low Leakage Current ... |
Features |
Super Fast Recovery Diode, 200A
• Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Repetitive peak reverse voltage VRRM R... |
File Size | 133.11KB |
Datasheet |
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MUR20040CT : MCC Features • • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# MUR20005CT THRU MUR20060CT 200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts FULL PACK Supre Fast switching for high efficiency High Surge Capability Low Leakage Low Forward Voltage Drop High Current Capability • Operating Temperature: -55°C to +175°C ww.DataSheet4U.com • Storage Temperature: -55°C to +175°C Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V IF(AV) IFSM Maximum DC Blocking Voltage 50V 100V 200V 400V 600V TC= 135°C Maximum Ratings MCC Part Number MUR20005CT MUR20010CT MUR20020CT MUR20040CT MUR20060CT Maximum RMS Volta.
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MUR20040CTR : Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
MUR20040CTR : Naina Semiconductor Ltd. MUR20040CT thru MUR20060CTR Features Super Fast Recovery Diode, 200A • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Repetitive peak reverse voltage VRRM RMS reverse voltage VRMS DC blocking voltage VDC Average forward current IF(AV) Non-repetitive forward surge current, half sinewave IFSM Conditions TC ≤ 140 oC TC = 25 oC MUR20040CT(R) 400 280 400 200 800 MUR20060CT(R) 600 420 600 200 800 Units V V V A A Electrical Characteristics (TJ = 25oC unless otherwise specified) Par.