| Part Number | APT50GS60SRDQ2 |
| Manufacturer | Microsemi |
| Title | High Speed NPT IGBT |
| Description | APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunder... |
| Features |
Typical Applications
APT50GS60BRDQ2(G) APT50GS60SRDQ2(G)
• Fast Switching with low EMI • Very Low EOFF for Maximum Efficiency • Short circuit rated • Low Gate Charge • ZVS Phase Shifted and other Full Bridge • Half Bridge • High Power PFC Boost • Welding Single die IGBT with separate DQ diode di... |
| File Size | 327.87KB |
| Datasheet |
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APT50GS60SRDQ2G : APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise TO-247 D3PAK and oscillation immunity an.