DatasheetsPDF.com

NTE335

Part Number	NTE335
Manufacturer	NTE
Title	Silicon NPN Transistor
Description	The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier application...
Features	D Specified 12.5V, 30MHz Characteristics: Output Power = 80W Minimum Gain = 12dB Efficiency = 50% D Available in ...
Published	Mar 29, 2015
Datasheet	NTE335 PDF File

Features

D Specified 12.5V, 30MHz Characteristics: Output Power = 80W Minimum Gain = 12dB Efficiency = 50% D Available in Two Different Package Designs: NTE335 (W52N, Flange Mount) NTE336 (T93D, Stud Mount) Absolute Maximum Ratings: Collector−Emitter...

Similar Datasheet

NTE330
Germanium PNP Transistor
(NTE)
NTE3300
Insulated Gate Bipolar Transistor
(NTE)
NTE3301
Insulated Gate Bipolar Transistor
(NTE)
NTE3302
Insulated Gate Bipolar Transistor
(NTE)
NTE3303
Insulated Gate Bipolar Transistor
(NTE)
NTE331
Silicon Complementary Transistors
(NTE)
NTE3310
Insulated Gate Bipolar Transistor
(NTE)
NTE3311
Insulated Gate Bipolar Transistor
(NTE)
NTE3312
Insulated Gate Bipolar Transistor
(NTE)

INDEX :5 7 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)