| Part Number | SSFP2N65 |
| Manufacturer | Good-Ark |
| Title | Power MOSFET |
| Description | StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases pac... |
| Features |
①
dv/dt
Peak Diode Recovery dv/dt ③
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max. 2.0 1.35 8 54 0.43 ±30 120 2.0 5.4 4.5
–55 to +175 300(1.6mm from case) 10 Ibf ●in(1.1N ●m) Units A W W/ْ C V mJ A mJ V/ns ْ... |
| File Size | 122.34KB |
| Datasheet |
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SSFP2N60 : StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application ■ Switching application VDSS = 600V ID25 = 2.0A RDS(ON) = 4.7Ω Pin1–Gate Pin2–Drain Pin1–Source Absolute Maximum Ratings ID@Tc=25ْ C ID@Tc=100ْC Parameter Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche .