2SC5381

2SC5380 : Power Transistors 2SC5380, 2SC5380A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 20 16 8 100 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction te.

2SC5380A : Power Transistors 2SC5380, 2SC5380A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 20 16 8 100 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction te.

2SC5382 : SHINDENGEN Switching Power Transistor 2SC5382 6A NPN OUTLINE DIMENSIONS Case : FTO-220 Unit : mm RATINGS •œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55•`150•Ž Junction Temperature Tj 150 •Ž Collector to Base Voltage V 1200 V CBO Collector to Emitter VoltageV 550 V CEO Emitter to Base Voltage V 9 V EBO Collector Current DC IC 6 A Collector Current Peak ICP 12 Base Current DC IB 3 A Base Current Peak IBP 6 Total Transistor Dissipation P 40 W T Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque) 0.5(0.3) N¥m •œElectrical Characteristics (Tc=25•Ž) Conditions Item Symbol Collector to Emitter Sustain.

2SC5382 : ·With TO-220F package ·High Voltage ·High speed switching PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1200 550 9 6 12 3 6 40 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.13 UNIT /W SavantIC Semiconductor P.

2SC5382 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 550V(Min) ·High Switching Speed ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 12 A IB Base Current-Continuous 3 A IBM Base Current-Peak PT Total Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 40 W .

2SC5383 : 2SC5383 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. . 0.4 1.6 0.8 0.4 OUTLINE DRAWING Unit：ｍｍ 0.5 ① ② ③ 1.6 1.0 FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ●Excellent linearity of DC forward gain. ●Ultra super mini package for easy mounting 0.7 0.5 For Hybrid IC,small type machine low frequency voltage Amplify application. JEITA：SC-75A JEDEC：- MAXIMUM RATINGS（Ta=25℃） Symbol VCBO VCEO VEBO I O TERMINAL CONNECTER Ratings 50 50 6 200 150 ＋150 -55～＋150 Unit V V V mA mW ℃ ℃ Parameter Collector to Base voltage Collector to Emitter voltage Emitter to .

2SC5383-T150 : 2SC5383 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@IC=100mA/IB=10mA） ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting 1.7 1.0 0.5 0.5 0.22 0.32 2SC5383-T150 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE AEC-Q101 Compliance OUTLINE DRAWING 1.5 0.35 0.8 0.35 Unit：ｍｍ ① ②③ 0.7 0.55 0～0.1 0.12 APPLICATION For Hybrid IC, Small type machine low frequency voltage amplify application. MAXIMUM RATINGS（Ta=25℃） Parameter Symbol Collector to Base voltage Emitter to Base voltage Collector.

2SC5384 : www.DataSheet4U.com DataSheet 4 U .com ISAHAYA ELECTRONICS CORPORATION www.DataSheet4U.com ISAHAYA ELECTRONICS CORPORATION DataSheet 4 U .com www.DataSheet4U.com ISAHAYA ELECTRONICS CORPORATION DataSheet 4 U .com www.DataSheet4U.com ISAHAYA ELECTRONICS CORPORATION DataSheet 4 U .com www.DataSheet4U.com ISAHAYA ELECTRONICS CORPORATION DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com .

2SC5386 : 2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 3 V (Max.) l High Speed : tf = 0.15 µs (Typ.) l Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 600 5 8 16 4 50 150 −55~150 UNIT V V V.

2SC5386 : ·With TO-3P(H)IS package www.datasheet4u.com ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5386 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 8 16 4 50 150 -55~150.

2SC5386 : ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV. ·High speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current- Peak 16 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature .

2SC5387 : 2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1500 V : VCE (sat) = 3 V (Max.) : tf = 0.15 μs (Typ.) Unit: mm z Collector Metal (Fin) is Fully Covered with Mold Resin. ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 600 5 10 20 5 50 150 −55~150 UNIT V V V A A W °C.

2SC5387 : ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV. ·High speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A ICM Collector Current- Pulse 20 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tst.

2SC5388 : Ordering number:ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features · High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5388] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Ts.