• Low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A)
• Low Ciss : Ciss = 860 pF (TYP.)
• Built-in gate protection diode ORDERING INFORMATI...
K2981 PDF File
