Part Number | Si4410DYPbF |
Manufacturer | International Rectifier |
Title | Power MOSFET |
Description | This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET powe... |
Features |
Recovery dv/dt
Single Pulse Avalanche Energy Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
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Parameter Maximum Junction-to-Ambient
Max. 30 ±10 ±8.0 ±50 2.5 1.6 0.02 5.0 400 ± 20
-55 to + 150
...
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Published | Aug 15, 2015 |
Datasheet | Si4410DYPbF PDF File |