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RJK03R4DPA

Renesas Technology
Part Number RJK03R4DPA
Manufacturer Renesas (https://www.renesas.com/) Technology
Title Built in SBD Dual N-channel Power MOS FET
Description Preliminary Datasheet RJK03R4DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.3 mΩ max. Built in...
Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting  Pb-free  Halogen-free Outline RENESAS Pac...
Published Aug 18, 2015
Datasheet PDF File RJK03R4DPA PDF File


RJK03R4DPA
RJK03R4DPA

Features

 Low on-resistance
 Capable of 4.5 V gate drive
 High density mounting
 Pb-free
 Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3)) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 ...


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