| Part Number | Si4420DYPbF |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and... |
| Features |
Avalanche Energy Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter Maximum Junction-to-Ambient
Max. 30
±12.5 ±10 ±50 2.5 1.6 0.02 400 ± 20 -55 to + 150
Max. 50
Units V
A
W W/°C
mJ V °C
Units °C/W
1
8/11/04
Si4420DYPbF
Electrical Char...
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| File Size | 110.75KB |
| Datasheet |
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