| Part Number | MX150 |
| Manufacturer | molex |
| Title | Sealed Connector |
| Description | METRIC Operating Temperature Range (USCAR Class III) Current Carrying Capacity (See Derating Curves below) Wire Range -40° to 125°C 2.00 to 0.5... |
| Features |
and Specifications
Connection System Construction. 8 1-by-2 Connector System...
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| File Size | 2.64MB |
| Datasheet |
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MX1506VP : The MX1506VP is a 60-watt, highly rugged, thermally enhanced, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 1.5 GHz. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as FM radio, VHF TV and Aerospace applications. Typical Performance (On Innogration narrow band fixture with device soldered): VDD = 50 Volts, IDQ = 200 mA, CW. Frequency Gp (dB) Pout (W) D@Pout (%) 915 MHz 23 60 60 Document Number: MX1506VP Preliminary Datasheet V1.0 MX1506VP Features High Efficiency and Linear Gain Operations Integrated ESD Protection Excellent thermal stabilit.
MX1512VP : The MX1512VP is a 120-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 1.5 GHz. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as FM radio, VHF TV and Aerospace applications. Typical Performance (On Innogration narrow band fixture with device soldered): VDD = 50 Volts, IDQ = 100 mA, CW. Frequency Gp (dB) Pout (W) D@Pout (%) 915 MHz 23 120 60 Document Number: MX1512VP Preliminary Datasheet V1.0 MX1512VP Features High Efficiency and Linear Gain Operations Integrated ESD Protection Excellent thermal stability, low HCI drift S.
MX1515 : .
MX1520C : The MX1520C is a 200-watt high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 1.5 GHz. Typical performance(on 108-512MHz wideband board with device soldered) Signal：Two-tone space 1.6MHz , Vgs=2.75V,Vds=28V, Idq=900mA Freq(MHz) Pin(dBm) Pav(W) Ids(A) Gain(dB) Eff(%) IMD3 48 23 40 4.56 23 31 -30 58 22.2 40 4.3 23.8 33 -32 68 22 40 4.06 24 35 -32 88 21.6 40 3.75 24.4 38 -32 108 21.4 40 3.57 24.6 40 -33 150 21.8 40 3.51 24.2 41 -32 200 21.5 40 3.52 24.5 40 -37 225 22.4 40 3.56 23.6 40 -38 250 23.1 40 3.6 22.9 39 -39 300 23 40 3.65 23 39 -40 350 22.2 40 3.63 23.8 39 -37 400 .