RDS(ON)=4.1Ω@VGS=10V.
Low gate charge (typical 9nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 201...
KIA2N60H PDF File
