1SS311

1SS312 : .

1SS313 : .

1SS313 : SMD Type Diodes VHF TUNER BAND SWITCH APPLICATIONS 1SS313 Features Small Total capacitance: CT = 1.2pF(Max) Low series resistance: rs = 0.6 (Typ.) A bsolute M axim um R atings T a = 25 P aram eter R everse V oltage Forward C urrent Junction tem perature S torage tem perature range Sym bol VR IF TJ T stg R ating 30 50 125 -55 to +125 U nit V mA Electrical Characteristics Ta = 25 P aram eter Forward voltage Reverse current Reverse voltage Total capacitance Series resistance S ym bol VF IR VR CT rs C o n d itio n s IF = 2 m A VR =15 V IR =1 A VR=6 V,f=1M Hz IF = 2 m A, f = 100 M Hz M in 30 Typ 0.8 0.6 Max 0.85 0.1 1.2 0.9 U n it V A V pF Marking Marking BG www.kexin.com.cn 1 .

1SS314 : TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 1SS314 VHF Tuner Band Switch Applications • Small package. • Small total capacitance: CT = 1.2 pF (max) • Low series resistance: rs = 0.5 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 30 V IF 100 mA Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volt.

1SS314 : Cathode Anode 12 TY Top View Marking Code: "TY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter HReverse Voltage Forward Current Junction Temperature CStorage Temperature Range TECharacteristics at Ta = 25 OC Parameter Forward Voltage Mat IF= 2 mA Reverse Current Eat VR= 15 V Reverse Voltage Sat IR= 1 μA Symbol VR IF TJ Tstg Value 30 100 125 - 55 to + 125 Unit V mA OC OC Symbol VF IR VR Min. 30 Max. 0.85 0.1 - Unit V μA V Total Capacitance at VR = 6 V, f = 1 MHz CT - 1.2 pF Series Resistance at IF = 2 mA, f = 100 MHz rS - 0.9 Ω SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 01/09/2005 1SS314 TOTAL.

1SS315 : TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range VRM IF Tj Tstg 5 V 30 mA 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appro.

1SS319 : TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching  Small package: SC-61  Low forward voltage: VF (3) = 0.54V (typ.)  Low reverse current: IR = 5μA (max) 1SS319 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA 1. CATHODE 1 2. CATHODE 2 Power dissipation P 150 * mW 3. ANODE 2 Junction temperature Tj 125 °C 4. ANODE 1 SMQ Storage temperature Tstg −55 to 125 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of .