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PBSS9110D

NXP
Part Number PBSS9110D
Manufacturer NXP
Description PNP transistor
Published Mar 29, 2016
Detailed Description PBSS9110D 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile...
Datasheet PDF File PBSS9110D PDF File

PBSS9110D
PBSS9110D

Overview
PBSS9110D 100 V, 1 A PNP low VCEsat (BISS) transistor Rev.
03 — 22 November 2009 Product data sheet 1.
Product profile 1.
1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110D.
1.
2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
3 Applications „ High-voltage DC-to-DC conversion „ High-voltage MOSFET gate driving „ High-voltage ...


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