| Part Number | PMD1602K |
| Manufacturer | Central Semiconductor |
| Title | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| Description | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 ... |
| Features |
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| File Size | 55.33KB |
| Datasheet |
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PMD1602K : ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 80V(Min) ·Complement to type PMD1702K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 80 80 5.0 20 40 0.5 180 150 -65~200 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 0.97 UNIT ℃/W isc Website：www.iscsemi..