RQJ0302NGDQA

RQJ0302NGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 138 mΩ typ (VGS = –10 V, ID = –1.1 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “NG”. Preliminary Datasheet R07DS0294EJ0600 Rev.6.00 Jan 10, 2014 3 D G 1. Sou...