Part Number
|
RQJ0304DQDQS |
Manufacturer
|
Renesas |
Description
|
Silicon P-Channel MOS FET |
Published
|
May 14, 2016 |
Detailed Description
|
RQJ0304DQDQS
Silicon P Channel MOS FET Power Switching
Features
• Low gate drive VDSS : –30 V and 2.5 V gate drive
• Lo...
|
Datasheet
|
RQJ0304DQDQS
|
Overview
RQJ0304DQDQS
Silicon P Channel MOS FET Power Switching
Features
• Low gate drive VDSS : –30 V and 2.
5 V gate drive
• Low drive current • High speed switching • Small traditional Power package (UPAK)
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
4
1G
Notes: Marking is "DQ".
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Thermal resistance
VDSS
VGSS
ID ID(pulse) Note1
IDR Pch Note2 Rth(ch-a) Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1.
PW ≤ 10 µs, Duty cycle ≤ 1%
2.
When using the glass epoxy board (FR-4 ...
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