RQJ0304DQDQA Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.
5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Notes: Marking is "DQ".
Preliminary Datasheet R07DS0296EJ0300 Rev.
3.
00 Jan 10, 2014 3 D 2 G S 1 1.
Source 2.
Gate 3.
Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 μs, Duty cycl...

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