NP55N04SLG
MOS FIELD EFFECT
TRANSISTOR
Preliminary Data Sheet
R07DS0242EJ0100 Rev.
1.
00
Feb 23, 2011
Description
The NP55N04SLG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
• Channel temperature 175 degree rating • Super low on-state resistance
⎯ RDS(on)1 = 6.
5 mΩ MAX.
(VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.
5 mΩ MAX.
(VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX.
(VGS = 4.
5 V, ID = 11 A) • Low input capacitance • Gate to Source ESD protection diode built-in
Ordering Information
Part No.
LEAD PLATING
PACKING
NP55N04SLG-E1-AY ∗1 NP55N04SLG-E2-AY ∗1
Pure Sn (Tin)
Tape 2500 p/reel
Note: ∗1.
Pb-free (This product does not contain Pb ...