Preliminary Datasheet RJH60D3DPP-M0 600V - 17A - IGBT Application: Inverter R07DS0162EJ0400 Rev.
4.
00 Apr 19, 2012 Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 70 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C) Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C 1 23 1.
Gate 2.
Collector G 3.
Emitter E Absolute Maximum Ratings Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltag...

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