RJK0328DPB-01 Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 1.
6 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS0264EJ0500 (Previous: REJ03G1637-0400) Rev.
5.
00 Mar 01, 2011 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistan...

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