STS20N3LLH6 N-channel 30 V, 0.
004 Ω, 20 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STS20N3LLH6 30 V 0.
0047 Ω 20 A t(s)■ RDS(on) * Qg industry benchmark uc■ Extremely low on-resistance RDS(on) d■ High avalanche ruggedness ro■ Low gate drive power losses P■ Very low switching gate charge leteApplication so■ Switching applications - ObDescription t(s)This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, ucwith a new gate structure.
The resulting Power dMOSFET exhibits the lowest RDS(on) in all Obsolete Propackages.
SO-8 Figure 1.
Internal schematic diagram Table 1.
Device summary Order code STS20N3LLH6 ...

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