1.
05
B5817W
SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD: 450 mW (Tamb=25℃) Collector current
IF: 1 A Collector-base voltage
VR: 20 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOD-123
Unit: mm
1.
6
2.
70 3.
70
0.
55
MARKING: SJ
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance
Symbol V(BR) IR VF CD
Test conditions
IR= 1mA
VR=20V IF=1A IF=3A VR=4V, f=1MHz
MIN
MAX
UNIT
20 V
1
0.
45 0.
75
120
mA
V
pF
...