RoHS B5817W
B5817W
SCHOTTKY BARRIER DIODE
FEATURES
DPower dissipation PD : 450 mW Tamb=25
TCollector current .
,LIF: 1 A
Collector-base voltage VR: 20 V
Operating and storage junction temperature range
OTJ Tstg: -55 to +150 CMARKING SJ
Unit mm
ICELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
ONParameter
Reverse breakdown voltage
RReverse voltage leakage current TForward voltage WEJ ELECDiodecapacitance
Symbol
Test conditions
V(BR) IR VF CD
IR= 1mA
VR=20V
IF=1A IF=3A VR=4V
f=1MHz
MIN
MAX
UNIT
20
1
0.
45 0.
75 120
V V
WEJ ELECTRONIC CO.
Http:// www.
wej.
cn E-mail:wej@yongerjia.
com
RoHS B5817W
WEJ ELECTRONIC CO.
,LTD
WEJ ELECTRONIC CO.
Http:// www.
wej.
cn E-mail:wej@y...