Freescale Semiconductor Technical Data
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.
Suitable for multicarrier amplifier applications.
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Power Gain — 21 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset — - 46.
8 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness.
Features • Charact...