FJB102 —
NPN High-Voltage Power Darlington
Transistor
December 2014
FJB102
NPN High-Voltage Power Darlington
Transistor
Features
• High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum) • Low Collector-Emitter Saturation Voltage
Equivalent Circuit C
B
1
D2-PAK
1.
Base 2.
Collector 3.
Emitter
Ordering Information
Part Number FJB102TM
Top Mark FJB102
R1
3 ≅ LΩ 3 ≅ LΩ
R2 E
Package TO-263 2L (D2PAK)
Packing Method Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device.
The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
I...