FJB3307D — High Voltage Fast Switching
NPN Power
Transistor
March 2012
FJB3307D High Voltage Fast Switching
NPN Power
Transistor
Features
• Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies
Internal Schematic Diagram C
1 D2-PAK 1.
Base 2.
Collector 3.
Emitter
B E
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
IB Base Current (DC)
IBP * Base Current (Pulse)
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW = 300μs, Duty Cycle = 2% Pu...