PRELIMINARY
FPD6836SOT343
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
• PERFORMANCE (1850 MHz) ♦ 0.
5 dB Noise Figure
♦ 20 dBm Output Power (P1dB) ♦ 20 dB Small-Signal Gain (SSG)
♦ 32 dBm Output IP3
♦ Evaluation Boards Available
• DESCRIPTION AND APPLICATIONS
The FPD6836SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (pHEMT).
It utilizes a 0.
25 µm x 360 µm
Schottky barrier Gate, defined by high-resolution stepper-based photolithography.
The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.
The FPD6...