2SA1162
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SA1162
Audio Frequency General Purpose Amplifier Applications
• High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.
1 mA)/hFE (IC = −2 mA)
= 0.
95 (typ.
) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.
), 10dB (max) • Complementary to 2SC2712 • Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −50 V
Collector-emitter voltage
VCEO −50 V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−150
mA
Base current
IB −30 mA
Collector power dissipation
PC 150 mW
Junction temperature ...