RoHS
2SA1162
PNP EPITAXIAL SILICON
TRANSISTOR
LOW FREQRENCY,LOW NOISE AMPLIFIER
DComplemen to 2SC2712
Collector-current:Ic=-100mA
.
,LTCollector-Emiller Voltage:VCE=-45V
SOT-23
1
1.
2.
4 1.
3
3
2 1.
BASE 2.
EMITTER 3.
COLLECTOR
2.
9 1.
9 0.
95 0.
95 0.
4
OUnit:mm
CABSOLUTE MAXIMUM RATINGS ICCharacteristic
Collector-Base Voltage Collector-Emitter Voltage
NEmitter-Base Voltage
Collector Current
OCollector Dissipation Ta=25oC*
Junction Temperature
RStorage Temperature
Symbol
VCBO VCEO VEBO Ic PD Tj Tstg
Rating
-50 -45 -5 -100 225 150 -55~150
(Ta=25 oC)
Unit
V V V mA mW
O
C
O
C
Electrical Characteristics
(Ta=25 oC)
TParameter
Symbol MIN.
TYP.
MAX.
Unit
Condition
CCollector-Base Breakdown Vo...