Part Number
|
FDB2670 |
Manufacturer
|
Kexin |
Description
|
N-Channel MOSFET |
Published
|
May 23, 2016 |
Detailed Description
|
SMD Type
MOSFET
200V N-Channel PowerTrench MOSFET KDB2670(FDB2670)
Features
19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V...
|
Datasheet
|
FDB2670
|
Overview
SMD Type
MOSFET
200V N-Channel PowerTrench MOSFET KDB2670(FDB2670)
Features
19 A, 200 V.
RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
+0.
25.
28 -0.
2
+0.
28.
7 -0.
2
TO-263
+0.
2
4.
57+0.
1 -0.
2 1.
27-0.
1
Unit: mm
+0.
11.
27 -0.
1
+0.
22.
54 -0.
2 15.
25-+00.
.
22 5.
60
1.
27+0.
1 -0.
1
0.
1max
2.
54+0.
2 -0.
2
5.
08+0.
1 -0.
1
0.
81+0.
1 -0.
1
2.
54
0.
4+0.
2 -0.
2
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current-Continuous Drain current-Pulsed Power dissipation
Derate above 25 Peak Diode Reco...
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