March 1998
FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect
Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
20
A,
30
V.
RDS(ON) = 0.
035 Ω RDS(ON) = 0.
055
@ Ω
VGS=10 V @ VGS=4.
5V.
...