SMD Type
MOSFET
P-Channel 2.
5V Specified Enhancement Mode Field Effect
Transistor
KDB4020P(FDB4020P)
Features
-16 A, -20 V.
RDS(on) = 0.
08 Ù @ VGS = -4.
5 V RDS(on) = 0.
11 Ù @ VGS = -2.
5 V.
Critical DC electrical parameters specified at elevated temperature.
High density cell design for extremely low RDS(on).
+0.
25.
28 -0.
2
+0.
28.
7 -0.
2
TO-263
+0.
2
4.
57+0.
1 -0.
2 1.
27-0.
1
Unit: mm
+0.
11.
27 -0.
1
+0.
22.
54 -0.
2 15.
25-+00.
.
22 5.
60
1.
27+0.
1 -0.
1
0.
1max
2.
54+0.
2 -0.
2
5.
08+0.
1 -0.
1
0.
81+0.
1 -0.
1
2.
54
0.
4+0.
2 -0.
2
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current TC=25 Drain current-pulsed Power dissipation
D...