Part Number
|
IS49NLC36800 |
Manufacturer
|
Integrated Silicon Solution |
Description
|
288Mb Common I/O RLDRAM 2 Memory |
Published
|
May 27, 2016 |
Detailed Description
|
IS49NLC93200,IS49NLC18160,IS49NLC36800
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
JANUARY 2020
FEATURES
400MH...
|
Datasheet
|
IS49NLC36800
|
Overview
IS49NLC93200,IS49NLC18160,IS49NLC36800
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
JANUARY 2020
FEATURES
400MHz DDR operation (800Mb/s/pin data rate) 28.
8Gb/s peak bandwidth (x36 at 400 MHz clock
frequency) Reduced cycle time (15ns at 400MHz) 32ms refresh (8K refresh for each bank; 64K refresh
command must be issued in total each 32ms) 8 internal banks Non-multiplexed addresses (address multiplexing
option available) SRAM-type interface Programmable READ latency (RL), row cycle time,
and burst sequence length Balanced READ and WRITE latencies in order to
optimize data bus utilization Data mask signals (DM) to mask signal of WRITE
data; DM is sampled on both edges ...
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