Part Number
|
IS49NLS96400A |
Manufacturer
|
Integrated Silicon Solution |
Description
|
Separate I/O RLDRAM 2 Memory |
Published
|
May 27, 2016 |
Detailed Description
|
IS49NLS96400A, IS49NLS18320A
576Mb (64Mbx9, 32Mbx18) Seperate I/O RLDRAM 2 Memory
ADVANCED INFORMATION SEPTEMBER 2014
...
|
Datasheet
|
IS49NLS96400A
|
Overview
IS49NLS96400A, IS49NLS18320A
576Mb (64Mbx9, 32Mbx18) Seperate I/O RLDRAM 2 Memory
ADVANCED INFORMATION SEPTEMBER 2014
FEATURES
533MHz DDR operation (1.
067 Gb/s/pin data rate) 38.
4Gb/s peak bandwidth (x18 at 533 MHz clock
frequency)
Reduced cycle time (15ns at 533MHz) 32ms refresh (16K refresh for each bank; 128K
refresh command must be issued in total each 32ms) 8 internal banks Non-multiplexed addresses (address multiplexing option available) SRAM-type interface Programmable READ latency (RL), row cycle time, and burst sequence length Balanced READ and WRITE latencies in order to optimize data bus utilization Data mask signals (DM) to mask signal of WRITE data; DM is ...
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