DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3060
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES • Low on-state resistance
RDS(on)1 = 13 mΩ MAX.
(VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX.
(VGS = 4.
0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3060
TO-220AB
2SK3060-S
TO-262
2SK3060-ZJ 2SK3060-Z
TO-263 TO-220SMDNote
Note This package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS...