MAGX-011086 GaN on Silicon General Purpose Amplifier DC - 6 GHz, 28 V, 4 W Features  GaN on Si HEMT D-Mode Amplifier  Suitable for Linear & Saturated Applications  Tunable from DC - 6 GHz  28 V Operation  9 dB Gain @ 5.
8 GHz  45% Drain Efficiency @ 5.
8 GHz  100% RF Tested  Thermally-Enhanced 4 mm 24-Lead QFN  RoHS* Compliant Rev.
V3 Description The MAGX-011086 is a GaN on silicon HEMT amplifier optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications.
The device has been designed for saturated and linear operation with output power levels of 4 W (36 dBm) in an industry standard, low inductance, surface mount QFN package.
The pads of the ...

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