Schottky Barrier Diode Silicon Epitaxial
1SS413
1.
Applications
• High-Speed Switching
2.
Packaging and Internal Circuit
SOD-923
fSC
1SS413
1: Cathode 2: Anode
1: Cathode 2: Anode
Start of commercial production
2002-11
1 2014-07-09 Rev.
3.
0
1SS413
3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
25 V
Reverse voltage
VR 20
Peak forward current
IFM 100 mA
Average rectified current
IO 50 mA
Power dissipation
PD (Note 1)
100
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj 125
Storage temperature
Tstg
-55 to 125
Note: Using continuous...