Part Number
|
1SS427 |
Manufacturer
|
Toshiba |
Description
|
Silicon Diode |
Published
|
May 28, 2016 |
Detailed Description
|
Switching Diodes Silicon Epitaxial Planar
1SS427
1. Applications
• Ultra-High-Speed Switching
2. Packaging and Internal ...
|
Datasheet
|
1SS427
|
Overview
Switching Diodes Silicon Epitaxial Planar
1SS427
1.
Applications
• Ultra-High-Speed Switching
2.
Packaging and Internal Circuit
SOD-923
fSC
1SS427
1: Cathode 2: Anode
1: Cathode 2: Anode
Start of commercial production
2005-12
1 2014-07-08 Rev.
3.
0
1SS427
3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
85 V
Reverse voltage
VR 80
Peak forward current
IFM 200 mA
Average rectified current
IO 100
Power dissipation
PD (Note 1)
150
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj 150
Storage temperature
Tstg
-55 to 150
Note: Using conti...
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