TOSHIBA Diode Silicon Epitaxial
Schottky Barrier Type
1SS420
High-Speed Switching Applications
• Low reverse current: IR = 5 µA (max)
1SS420
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage
VRM
35
Reverse voltage
VR 30
Maximum (peak) forward current IFM 300
Average forward current
IO 200
Surge current (10 ms)
IFSM
1
Power dissipation
P * 150
Junction temperature
Tj 125
Storage temperature range
Tstg −55~125
Operating temperature range
Topr −40~100
* Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Unit
V V mA mA A mW °C °C °C
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.
0014 g (typ.
)...