Part Number
|
IXTB30N100L |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
May 31, 2016 |
Detailed Description
|
Power MOSFETs with IXTB 30N100L
Extended FBSOA
IXTN 30N100L
N-Channel Enhancement Mode Avalanche Rated
VDSS = 1000 V...
|
Datasheet
|
IXTB30N100L
|
Overview
Power MOSFETs with IXTB 30N100L
Extended FBSOA
IXTN 30N100L
N-Channel Enhancement Mode Avalanche Rated
VDSS = 1000 V ID25 = 30 A
≤RDS(on) 0.
45 Ω
Symbol
VDSS VDGR V
GS
VGSM ID25 IDM
IAR EAR EAS P
D
TJ TJM Tstg TL V
ISOL
Md
FC Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
Maximum Ratings
IXTB
IXTN
PLUS264 (IXTB)
1000
1000
V
1000
1000
V
± 30 ± 40
± 30 ± 40
V V
TC = 25°C TC = 25°C, Pulse width limited by T
JM
TC = 25°C
TC = 25°C
TC = 25°C
T = 25°C C
30 30 70 70
30 30 80 80 2.
0 2.
0 800 800
-55 .
.
.
+150 150
-55 .
.
.
+150
AG
A
D S
(TAB)
A miniBLOC, SOT-227 B (IXTN) mJ E153432
S
J DG
W
°C G
°C
S
°C
S
D
S
1.
6 mm (0.
063 in) ...
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