Part Number
|
IXTN32P60P |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
May 31, 2016 |
Detailed Description
|
Preliminary Technical Information
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTN32P60P
VDSS ID...
|
Datasheet
|
IXTN32P60P
|
Overview
Preliminary Technical Information
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTN32P60P
VDSS ID25
= =
≤RDS(on)
- 600V - 32A
350mΩ
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR dV/dt PD TJ TJM Tstg TL TSOLD VISOL
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
Mounting torque
Terminal Connection torque
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250...
Similar Datasheet