MS10N65SJ 10A 650V N-Channel Super Junction MOSFET GENERAL DESCRIPTION The MS10N65SJ is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, super junction device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications FEATURES • Low RDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Continuous drain current P...

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