Philips Semiconductors
PowerMOS
transistor
Product specification
PHP8N50
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance.
Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS ID Ptot RDS(ON)
Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance
MAX.
500 8.
8 147 0.
8
UNIT
V A W Ω
PINNING - TO220AB
PIN DESCRIPTION 1 gate 2 drai...