Part Number
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IS66WVE4M16ALL |
Manufacturer
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ISSI |
Description
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1.8V Core Async/Page PSRAM |
Published
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Jun 9, 2016 |
Detailed Description
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IS66WVE4M16ALL IS67WVE4M16ALL
1.8V Core Async/Page PSRAM
Overview The IS66WVE4M16ALL is an integrated memory device cont...
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Datasheet
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IS66WVE4M16ALL
|
Overview
IS66WVE4M16ALL IS67WVE4M16ALL
1.
8V Core Async/Page PSRAM
Overview The IS66WVE4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.
The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode.
Both these modes reduce standby current drain.
The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features
Asynchronous and page mode interface Dual voltage rails for optional performance
VDD 1.
8V, VDDQ 1.
8V Page mode read access
Int...
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