Part Number
|
IS66WV51216EALL |
Manufacturer
|
ISSI |
Description
|
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
Published
|
Jun 9, 2016 |
Detailed Description
|
IS66WV51216EALL IS66/67WV51216EBLL
8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
SEPTEMBER 2022
Features
...
|
Datasheet
|
IS66WV51216EALL
|
Overview
IS66WV51216EALL IS66/67WV51216EBLL
8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
SEPTEMBER 2022
Features
High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL )
CMOS Lower Power Operation
Single Power Supply - VDD =1.
7V~1.
95V( IS66WV51216EALL ) - VDD =2.
5V~3.
6V (IS66/67WV51216EBLL )
Three State Outputs Data Control for Upper and Lower bytes Lead-free Available
DESCRIPTION
The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits.
It is fabricated using ISSI’s high performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields high-...
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