Part Number
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IS66WVD4M16ALL |
Manufacturer
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ISSI |
Description
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64Mb Async and Burst CellularRAM |
Published
|
Jun 9, 2016 |
Detailed Description
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IS66WVD4M16ALL
64Mb Async and Burst CellularRAM 2.0
Overview The IS66WVD4M16ALL is an integrated memory device containin...
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Datasheet
|
IS66WVD4M16ALL
|
Overview
IS66WVD4M16ALL
64Mb Async and Burst CellularRAM 2.
0
Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.
The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst mode for increased read and write bandwidth.
The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh.
Both these modes reduce standby current drain.
The device can be operated in a standard asynchronous mode and high performance burst mode.
The die has...
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