TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK372
For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
2SK372
Unit: mm
· High breakdown voltage: VGDS = −40 V · High input impedance: IGSS = −1.
0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 20 Ω (typ.
) (IDSS = 15 mA) · Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-40 10 200 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.
13 g (typ.
)
Characteristics
Symbol
...