Part Number
|
TMAN20N50A |
Manufacturer
|
TRinno |
Description
|
N-channel MOSFET |
Published
|
Jun 12, 2016 |
Detailed Description
|
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
B...
|
Datasheet
|
TMAN20N50A
|
Overview
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
BVDSS 500V
TMAN20N50A
N-channel MOSFET ID RDS(on) 20A 0.
3W
Device TMAN20N50A
Package TO-3PN
Marking TMAN20N50A
Remark RoHS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering pur...
Similar Datasheet