Part Number
|
TMAN9N90 |
Manufacturer
|
TRinno |
Description
|
N-channel MOSFET |
Published
|
Jun 15, 2016 |
Detailed Description
|
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
T...
|
Datasheet
|
TMAN9N90
|
Overview
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
TO-3PN
BVDSS 900V
TMAN9N90
N-channel MOSFET
ID RDS(on)
9.
5A
1.
4W
D
G
Device TMAN9N90
Package TO-3PN
Marking TMAN9N90
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering pu...
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