Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification BVDSS 800V TMAN8N80 N-channel MOSFET ID RDS(on) 8A 1.
4W Device TMAN8N80 Package TO-3PN Marking TMAN8N80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from cas...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)